Growth of AlN-SiC solid solutions by sequential supply epitaxy

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 435-439

  Avramescu, A ^a   Hirayama, H ^a   Aoyagi, Y ^a   Tanaka, S ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A3. Sequential suppl epitaxy; B1. Nitrides; B2. Semiconducting quaternary alloys; B2. Wide bandgap semiconductors

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL ANALYSIS; ELECTRON SPECTROSCOPY; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILANES; SOLID SOLUTIONS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

SEQUENTIAL SUPPLY EPITAXY (SSE);

CRYSTAL GROWTH;

EID: 0036131677     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01703-1     Document Type: Article

References (9)