Ion beam synthesis: A novel method of producing (SiC)1-x(AlN)x layers

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 753-756

  Yankov, R A ^a,b   Fukarek, W ^a   Voelskow, M ^a   Pezoldt, J ^b   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Buried Layers; Damage; Dynamic Annealing; Ion Implantation

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ION BEAMS; ION IMPLANTATION; NITRIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

ALUMINUM NITRIDE;

HETEROJUNCTIONS;

EID: 11644328742     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (7)

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5. J. Pezoldt, R.A. Yankov, W. Fukarek, M. Voelskow, V. Heera and W. Skorupa, 39th Electron. Mater. Conf., June 25-27 (1997) Fort Collins, Colorado, USA; to be published in J. Electron. Mater.
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