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Volumn 8, Issue 4, 1998, Pages 181-194
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Recent results on the preparation of doped layers, contacts, and interfaces in diamond by means of ion implantation
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Author keywords
Acceptors; Diamond; Donors; Electron injection; Hopping conduction; Interstitials; Ion implantation; Ohmic contacts; Vacancies
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Indexed keywords
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EID: 3042954581
PISSN: 13449931
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (12)
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References (26)
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