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Volumn 8, Issue 4, 1998, Pages 181-194

Recent results on the preparation of doped layers, contacts, and interfaces in diamond by means of ion implantation

Author keywords

Acceptors; Diamond; Donors; Electron injection; Hopping conduction; Interstitials; Ion implantation; Ohmic contacts; Vacancies

Indexed keywords


EID: 3042954581     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (12)

References (26)
  • 16
    • 0000787278 scopus 로고
    • G. Davies: Nature 269 (1977) 498.
    • (1977) Nature , vol.269 , pp. 498
    • Davies, G.1
  • 26
    • 3042986900 scopus 로고    scopus 로고
    • Ch. 17 Eds. A. Paoletti and A. Tucciarone IOS Press, Amsterdam
    • J. F. Prins: Ch. 17 in The Physics of Diamond, Eds. A. Paoletti and A. Tucciarone (IOS Press, Amsterdam, 1997).
    • (1997) The Physics of Diamond
    • Prins, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.