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Volumn 7, Issue 2-5, 1998, Pages 545-549

Doping of diamond by the diffusion of interstitial atoms into layers containing a low density of vacancies

Author keywords

Diamond; Electrical conductivity; Ion implantation; n type doping

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HELIUM; ION IMPLANTATION; IONS;

EID: 0031995530     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00251-3     Document Type: Article
Times cited : (14)

References (32)
  • 10
  • 12
    • 85030492392 scopus 로고    scopus 로고
    • M.A. Prelas, G. Popovici, L.K. Bigelow (Eds), New York, p.??
    • R. Kalish, S. Prawer, in: M.A. Prelas, G. Popovici, L.K. Bigelow (Eds), Marcel Dekker, New York, 1996, p.??.
    • (1996) Marcel Dekker
    • Kalish, R.1    Prawer, S.2
  • 17
    • 0000787278 scopus 로고
    • G. Davies, Nature 269 (1977) 498.
    • (1977) Nature , vol.269 , pp. 498
    • Davies, G.1
  • 27
    • 0042049056 scopus 로고    scopus 로고
    • S.A. Patent Application No. 96/4921, 10 June 1996
    • J.F. Prins, S.A. Patent Application No. 96/4921, 10 June 1996.
    • Prins, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.