Atomic-scale structural evolution of Ge(100) surfaces etched by H and D

Applied Physics Letters

Volumn 84, Issue 24, 2004, Pages 5028-5030

  Lee, Jun Young ^a   Jung, Soon Jung ^a   Maeng, Jae Yeol ^a   Cho, Young Eun ^a   Kim, Sehun ^a   Jo, Sam K ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Gachon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEUTERIUM; DIMERS; ETCHING; FIELD EMISSION MICROSCOPES; HYDROGEN; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

DIMER VACANCIES (DV); FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FE-SEM); LINE DEFECTS; SIGNLE ATOM VACANCIES (SV);

SEMICONDUCTING GERMANIUM;

EID: 3042854035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763635     Document Type: Article

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