Twin-bit silicon-oxide-nitride-oxide-silicon (SONOS) memory by inverted sidewall patterning (TSM-ISP)

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 246-252

  Lee, Yong Kyu ^a   Kim, Tae Hun ^a   Lee, Sang Hoon ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

Oxide nitride oxide (ONO); Program; Sidewall; Silicon oxide nitride oxide silicon (SONOS); Simulation; Twin bit silicon oxide nitride oxide silicon memory (TSM) inverted side wall patterning (ISP); Two bit

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; NITRIDES; OPTIMIZATION; SILICA;

CHANNEL HOT ELECTRON INJECTION (CHEI); HOT HOLE INJECTION (HHI); SIDE-WALLS;

DATA STORAGE EQUIPMENT;

EID: 3042848836     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820776     Document Type: Conference Paper

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