Composition and electrical properties of metallic Ru thin films deposited using Ru(C6H6)(C6H8) Precursor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6852-6856

  Choi, Jongwan ^a   Choi, Youngmin ^a   Hong, Jongin ^a   Tian, Huyong ^a   Roh, Jae Sung ^c   Kim, Younsoo ^c   Chung, Taek Mo ^b   Oh, Young Woo ^b   Kim, Yunsoo ^b   Kim, Chang Gyun ^b   No, Kwangsoo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Composition; CVD; Electrode; ERD TOF; Precursor; Resistivity; Ru

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODES; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHENIUM;

ERD-TOF; PRECURSOR; RESISTIVITY;

THIN FILMS;

EID: 3042845794     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6852     Document Type: Article

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