InP-based high speed digital logic gates using an RTD/HBT heterostructure

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 419-422

  Lin, C H ^a   Yang, K ^a   Gonzalez, A F ^a   East, J R ^a   Mazumder, P ^a   Haddad, G I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

HIGH-SPEED MONOLITHICALLY INTEGRATED STATIC INVERTERS; RESONANT TUNNELING DIODES (RTD);

LOGIC GATES;

EID: 0032681467     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)