Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1541-1544

  Ha, Jeong Sook ^a   Jang, Young Rae ^b   Yoo, Keon Ho ^b   Bae, Chang Hyun ^b   Nam, Sang Hwan ^b   Jeon, Ji Seon ^b   Park, Seung Min ^b  

^a Korea University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

1.54 m photoluminescence; Er doped silicon; Pulsed laser deposition

Indexed keywords

DOPING (ADDITIVES); ERBIUM; LASER ABLATION; OXYGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; THIN FILMS;

ER-DOPED SILICON; OXYGEN PRESSURE; PHOTOLUMINESCENCE INTENSITY;

SILICA;

EID: 3042714508     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1541     Document Type: Article

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