Atomic level characterization of ultrathin flat cobalt disilicide film with three crystalline domains

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9663-9666

  Ohtomo, Takumi ^a   Kawasaki, Tadahiro ^a   Takai, Yoshizo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ATOMIC LEVELS; COBALT DISILICIDE; CRYSTALLINE DOMAINS; DARK-FIELD; ELECTRON DIFFRACTION DATA; HIGH-RESOLUTION TEM; INTERFACE STRUCTURES; SHORT RANGE ORDERS; SI (001) SUBSTRATE; SILICON SUBSTRATES; SMALL-CRYSTALLINE; TRANSMISSION ELECTRON MICROSCOPY TEM; ULTRA-THIN; ULTRATHIN COBALT;

COBALT; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

INTERFACES (MATERIALS);

EID: 0037097962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1478797     Document Type: Article

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