Structure modelling of Σ3 and Σ9 coincident boundaries in CVD diamond thin films

Journal of Electron Microscopy

Volumn 48, Issue 3, 1999, Pages 245-251

  Zhang, Yaogang ^a,c   Ichinose, Hideki ^a   Nakanose, Megumi ^b   Ito, Kunio ^a   Ishida, Yoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NISSAN MOTOR CO   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

Atomic structure modelling; Computer image simulation; CVD diamond thin films; Grain boundaries; High resolution electron microscopy

Indexed keywords

ATOMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DANGLING BONDS; ELECTRONIC STRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY; RIGID STRUCTURES; THIN FILMS;

ATOMIC STRUCTURE MODELING; CHEMICAL VAPOR DEPOSITED DIAMOND; CHEMICAL VAPOR DEPOSITED DIAMOND THIN FILM.; COMPUTER IMAGE SIMULATION; COMPUTER IMAGES; COORDINATED SITES; DIAMOND THIN FILM; GRAIN-BOUNDARIES; IMAGES SIMULATIONS; STRUCTURE MODELS;

GRAIN BOUNDARIES;

EID: 0032973239     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023674     Document Type: Article

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