Light emission induced by tunnelling electrons from a p-type GaAs(110) surface observed at near-field by a conductive optical fibre probe

Nanotechnology

Volumn 15, Issue 6, 2004, Pages

  Fujita, Daisuke ^a   Onishi, Keiko ^a   Niori, Noriko ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EDDY CURRENTS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; LIGHT EMITTING DIODES; NEAR FIELD SCANNING OPTICAL MICROSCOPY; OPTICAL FIBERS; ORGANIC POLYMERS; PHOTOEMISSION; PHOTOMULTIPLIERS; PHOTONS; PROBES; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

BAND GAPS; CHARGED COUPLED DEVICE (CCD) CAMERAS; INELASTIC ELECTRON TUNNELING (IET); LOCAL BAND POTENTIAL CHANGES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3042658544     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/6/007     Document Type: Conference Paper

References (33)

1. Berndt R 1994 Scanning Probe Microscopy and Spectroscopy ed R Wiesendanger (Cambridge: Cambridge University Press) p 97
2. Berndt R, Gimzewski J K and Johansson P 1993 Phys. Rev. Lett. 71 3493-6
3. Berndt R, Gaisch R, Schneider W D, Gimzewski J K, Reihl B, Schlittler R R and Tschudy M 1995 Phys. Rev. Lett. 74 102-5
4. Uehara Y, Fujita T and Ushioda S 1999 Phys. Rev. Lett. 83 2445-8
5. Downes A and Welland M E 1998 Phys. Rev. Lett. 81 1857-60
6. Thirstrup C, Sakurai M, Stokbro K and Aono M 1999 Phys. Rev. Lett. 82 1241-4
7. Sasaki S and Murashita T 1999 Japan. J. Appl. Phys. 38 L4-6
8. Hoshino M and Yamamoto N 2003 Mater. Res. Soc. Symp. Proc. 738 149-54
9. Yokoyama T and Takiguchi Y 2001 Surf. Sci. 482-485 1163-8
10. Berndt R, Gaisch R, Schneider W D, Gimzewski J K, Reihl B, Schlittler R R and Tschudy M 1993 Appl. Phys. A 57 513-6
11. Fujita D, Ohgi T, Deng W, Ishige K, Okamoto T, Yokoyama S, Kamikado T and Mashiko S 2001 Surf. Sci. 493 702-7
12. Alvarado S F, Rieß W, Seidler P F and Strohriegl P 1997 Phys. Rev. B 56 1269-78
13. Lidzey D G, Alvarado S F, Seidler P F, Bleyer A and Bradley D D C 1997 Appl. Phys. Lett. 71 2008-10
14. Tsuruoka T, Ohizumi Y, Ushioda S, Ohno U and Ohno H 1998 Appl. Phys. Lett. 73 1544-6
15. Evoy S, Harnett C K, Craighead H G, Keller S, Mishra U K and DenBaars S P 1999 Appl. Phys. Lett. 74 1457
16. Johansson P, Monreal R and Apell P 1990 Phys. Rev. B 42 9210-3
17. Uehara Y, Kimura Y, Ushioda S and Takeuchi K 1992 Japan. J. Appl. Phys. 31 2465-9
18. Downes A, Taylor M E and Welland M 1998 Phys. Rev. B 57 6706-14
19. Johansson P 1998 Phys. Rev. B 58 10823-34
20. Lidzey D G, Bradley D D C, Skolnick M S, Virgili T, Walker S and Whittaker D M 1998 Nature 395 53-5
21. Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradley D D C, Dos Sandos D A, Bredas J L, Logdlund M and Salaneck W R 1999 Nature 397 121-8
22. Murashita T 1997 J. Vac. Sci. Technol. B 15 32-7
23. Murashita T 1999 J. Vac. Sci. Technol. B 17 22-8
24. Ohtsu M 1998 Near-Field Nano/Atom Optics and Technology (Tokyo: Springer) p 71
25. de Raad G J, Bruls D M, Koenraad P M and Wolter J H 2001 Phys. Rev. B 64 075314-20
26. Abraham D L, Veider A, Schönenberger Ch, Meier H P, Arent D J and Alvarado S F 1990 Appl. Phys. Lett. 56 1564-6
27. Madelung O 1996 Semiconductors - Basic Data (Berlin: Springer) p 101
28. Fujita D, Amemiya K, Yakabe T, Nejoh H, Sato T and Iwatsuki M 1997 Phys. Rev. Lett. 78 3904-7
29. Yu P Y and Cardona M 1996 Fundamentals of Semiconductors (Berlin: Springer) p 339
30. Alvarado S F, Renaud Ph, Abraham D L, Schönenberger Ch and Arent D J 1991 J. Vac. Sci. Technol. B 9 409-13
31. Zheng Z F, Salmeron M B and Weber E R 1994 Appl. Phys. Lett. 64 1836-8
32. de Kort R, van der Wielen M C M M, van Roij A J A, Kets W and van Kempen H 2001 Phys. Rev. B 63 125336-41
33. Murashita T and Tateno K 2001 Appl. Phys. Lett. 78 3995-7