STM light emission from p-type GaAs (110) surface

Materials Research Society Symposium - Proceedings

Volumn 738, Issue , 2003, Pages 149-154

  Hoshino, M ^a   Yamamoto, N ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; LIGHT EMISSION; STRAIN; SURFACE PROPERTIES; ZINC;

STRAIN EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038649893     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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