메뉴 건너뛰기




Volumn 1, Issue , 2004, Pages 494-499

Simultaneous state, Vt and Tox assignment for total standby power minimization

Author keywords

[No Author keywords available]

Indexed keywords

FLIP-FLOP MODIFICATION; THICK-OXIDE TRANSISTORS; TOTAL STANDBY POWER MINIMIZATION; TOX ASSIGNMENT; BENCHMARK CIRCUIT; DELAY CONSTRAINTS; GATE OXIDE LEAKAGE CURRENTS; GATE OXIDE THICKNESS; LEAKAGE CURRENT REDUCTION; MOBILE APPLICATIONS; OPTIMIZATION PROBLEMS; SUB-THRESHOLD LEAKAGE;

EID: 3042610022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (21)

References (18)
  • 1
    • 0030712582 scopus 로고    scopus 로고
    • A gate-level leakage power reduction method for ultra-low-power CMOS circuits
    • J. Halter and F. Najm, "A gate-level leakage power reduction method for ultra-low-power CMOS circuits," Proc. CICC, 1997.
    • (1997) Proc. CICC
    • Halter, J.1    Najm, F.2
  • 2
    • 0029359285 scopus 로고
    • 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
    • Aug.
    • S. Mutoh, et al., "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE JSSC, vol.30, pp.847-854, Aug. 1995.
    • (1995) IEEE JSSC , vol.30 , pp. 847-854
    • Mutoh, S.1
  • 4
    • 0032680122 scopus 로고    scopus 로고
    • Models and algorithms for bounds on leakage in CMOS circuits
    • June
    • M.C. Johnson, et al., "Models and algorithms for bounds on leakage in CMOS circuits," IEEE Trans. CAD, June 1999.
    • (1999) IEEE Trans. CAD
    • Johnson, M.C.1
  • 5
    • 4444244195 scopus 로고    scopus 로고
    • Analysis and minimization techniques for total leakage considering gate oxide leakage
    • D. Lee, et al., "Analysis and minimization techniques for total leakage considering gate oxide leakage," Proc. DAC, 2003.
    • (2003) Proc. DAC
    • Lee, D.1
  • 6
    • 84942120040 scopus 로고    scopus 로고
    • Design techniques for gate-leakage reduction in CMOS circuits
    • R.S. Guindi and F.N. Najm, "Design techniques for gate-leakage reduction in CMOS circuits," Proc. ISQED, pp.61-65, 2003.
    • (2003) Proc. ISQED , pp. 61-65
    • Guindi, R.S.1    Najm, F.N.2
  • 7
    • 0036948939 scopus 로고    scopus 로고
    • Circuit-level techniques to control gate leakage for sub-100nm CMOS
    • F. Hamzaoglu et al., "Circuit-level techniques to control gate leakage for sub-100nm CMOS," Proc. ISLPED, pp.60-63, 2002.
    • (2002) Proc. ISLPED , pp. 60-63
    • Hamzaoglu, F.1
  • 8
    • 0033719725 scopus 로고    scopus 로고
    • Boosted gate MOS (BGMOS): Device/circuit cooperation scheme to achieve leakage-free Giga-scale integration
    • T. Inukai, et al., "Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free Giga-scale integration," Proc. CICC, pp. 409-412, 2000.
    • (2000) Proc. CICC , pp. 409-412
    • Inukai, T.1
  • 9
    • 0036543067 scopus 로고    scopus 로고
    • Duet: An accurate leakage estimation and optimization tool for dual Vt circuits
    • April
    • S. Sirichotiyakul, et al., "Duet: an accurate leakage estimation and optimization tool for dual Vt circuits," IEEE Trans. VLSI, pp. 79-90, April 2002.
    • (2002) IEEE Trans. VLSI , pp. 79-90
    • Sirichotiyakul, S.1
  • 10
    • 0036907253 scopus 로고    scopus 로고
    • Standby power optimization via transistor sizing and dual threshold voltage assignment
    • M.Ketkar, et al., "Standby power optimization via transistor sizing and dual threshold voltage assignment," Proc.ICCAD, 2002.
    • (2002) Proc.ICCAD
    • Ketkar, M.1
  • 12
    • 0042635859 scopus 로고    scopus 로고
    • Static leakage reduction through simultaneous threshold voltage and state assignment
    • D. Lee, et al., "Static leakage reduction through simultaneous threshold voltage and state assignment," Proc. DAC, 2003.
    • (2003) Proc. DAC
    • Lee, D.1
  • 14
    • 0034248817 scopus 로고    scopus 로고
    • A comparative study of gate direct tunneling and drain leakage currents in N-MOSFETs with sub-2nm gate oxides
    • Aug.
    • N. Yang, et al., "A comparative study of gate direct tunneling and drain leakage currents in N-MOSFETs with sub-2nm gate oxides," IEEE Trans. Electron Devices, Aug.2000.
    • (2000) IEEE Trans. Electron Devices
    • Yang, N.1
  • 15
    • 0033719720 scopus 로고    scopus 로고
    • Limits of gate oxide scaling in nano-transistors
    • B. Yu, et al., "Limits of gate oxide scaling in nano-transistors, " Proc. Symp. VLSI Tech., pp. 90-91, 2000.
    • (2000) Proc. Symp. VLSI Tech. , pp. 90-91
    • Yu, B.1
  • 16
    • 0034318446 scopus 로고    scopus 로고
    • Direct tunneling gate leakage current in transistors with ultra thin silicon nitride gate dielectric
    • Nov.
    • Y.-C. Yeo, et al., "Direct tunneling gate leakage current in transistors with ultra thin silicon nitride gate dielectric," IEEE Electron Device Letters, pp. 540-542, Nov. 2000.
    • (2000) IEEE Electron Device Letters , pp. 540-542
    • Yeo, Y.-C.1
  • 18
    • 0002609165 scopus 로고
    • A Neutral netlist of 10 combinational benchmark circuits
    • F. Brglez and H. Fujiwara, "A Neutral netlist of 10 combinational benchmark circuits", Proc. ISCAS, 1985, pp.695-698
    • (1985) Proc. ISCAS , pp. 695-698
    • Brglez, F.1    Fujiwara, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.