Mechanism for reduced NBTI effect under pulsed bias stress conditions

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 689-690

  Zhu, B ^a   Suehle, J S ^b   Bernstein, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE DETRAPPING; PULSED BIAS STRESS CONDITIONS; STRESS WAVEFORMS;

ACTIVATION ENERGY; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); INTERFACES (MATERIALS); PROBABILITY;

MOSFET DEVICES;

EID: 3042566863     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. B. Zhu, et al, "Negative bias temperature instability of deep sub-micron p-MOSFETs under pulsed bias stress," Integrated Reliability Workshop Final Report, 2002, IEEE International, pp. 125-129.
2. G. Chen, et al, "Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling," Electron Device Letters, IEEE, Vol. 23, 2002, pp. 734-736.
3. B. Abadeer, et al, "Behavior of NBTI under AC dynamic circuit conditions," Reliability Physics Symposium Proceedings, 2003, pp. 17-22.
4. G. Chen, et al, "Dynamic NBTI of PMOS transistors and its Impact on MOSFET lifeline," Reliability Physics Symposium Proceedings, 2003, pp. 196-202.
5. Huard, et al, "Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs," Reliability Physics Symposium Proceedings, 2003, pp. 178-182.
6. E. M. Vogel et al, "Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection," J. Appl. Phys, Vol. 90, 2001, pp. 2338-2346.