Time and voltage dependence of degradation and recovery under pulsed Negative Bias Temperature stress

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 610-611

  Usui, Hirold ^a   Kanno, Michihiro ^a   Morikawa, Takafumi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

AC stress; Lifetime; LOGIC; Negative Bias Temperature Instability; P MOSFET; Pulsed stress; Recovery; Time dependence; Voltage dependence

Indexed keywords

BIAS VOLTAGE; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; RECONFIGURABLE HARDWARE; RECOVERY; RELIABILITY; THERMODYNAMIC STABILITY;

AC STRESS; LIFETIME; LOGIC; NEGATIVE BIAS TEMPERATURE INSTABILITY; PMOSFET; TIME DEPENDENCE; VOLTAGE DEPENDENCE;

INTEGRATED CIRCUITS;

EID: 84955278319     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197830     Document Type: Conference Paper

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