Annealing process of N+-/P+-Ions coimplanted along with Si+-, C+- Or Ne+-ions into 4H-SiC - Governed by formation of electrically neutral complexes or by site-competition-effect?

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 909-912

  Schmid, F ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Ion implantation; Nitrogen donors; Phosphorus donors; Site competition effect

Indexed keywords

ANNEALING; COMPLEXATION; HALL EFFECT; ION IMPLANTATION; MONTE CARLO METHODS; NEON; OHMIC CONTACTS; PHOSPHORUS;

NITROGEN DONORS; PHOSPHOROUS DONORS; SITE COMPETITION EFFECTS;

SILICON CARBIDE;

EID: 8644290140     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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