Mechanisms for formation of a one-dimensional horizontal anodic aluminum oxide nanopore array on a Si substrate

Journal of the Electrochemical Society

Volumn 152, Issue 12, 2005, Pages

  Chen, Zhi ^a   Zhang, Hongguo ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DISSOLUTION; ELECTRIC FIELDS; POROSITY; SILICON; SOLUTIONS; THIN FILMS;

POROUS STRUCTURES; THEORETICAL MODEL;

ANODIC OXIDATION;

EID: 30344483232     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2120347     Document Type: Article

References (32)

1. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London), 393, 49 (1998).
2. R. Martel, T. Schmidt, T. Hertel, and P. Avouris, Appl. Phys. Lett., 73, 2447 (1998).
3. J. T. Hu, O. Y. Min, P. D. Yang, and C. M. Lieber, Nature (London), 399, 48 (1999).
4. X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature (London), 421, 241 (2003).
5. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science, 294, 1317 (2001).
6. H. W. C. Postma, T. Teepen, Z. Yao, M. Grifoni, and C. Dekker, Science, 293, 76 (2001).
7. T. W. Ebbssen, Phys. Today, 49(6), 26 (1996).
8. W. B. Choi, D. S. Chung, J. G. S. Park et al., Appl. Phys. Lett., 75, 3129 (1999).
9. W. B. Choi, E. J. Bae, J. W. Lee, J. J. Kim, and J. O. Lee, Appl. Phys. Lett., 79, 22 (2001).
10. C. R. Martin, Chem. Mater., 8, 1739 (1996).
11. P. Hoyer, K. Nishio, and H. Masuda, Thin Solid Films, 286, 88 (1996).
12. P. Hoyer, N. Baba, and H. Masuda, Appl. Phys. Lett., 66, 2700 (1995).
13. D. Crouse, L. Yu-Hwa, E. Miller, and M. Crouse, Appl. Phys. Lett., 76, 49 (2000).
14. A. Cai, H. Zhang, H. Hua, and Z. Zhang, Nanotechnology, 13, 627 (2002).
15. A. J. Yin, J. Li, W. Jian, A. J. Bennett, and J. M. Xu, Appl. Phys. Lett., 79, 1039 (2001).
16. J. Liang, S. K. Hong, N. Kouklin, R. Beresford, and J. M. Xu, Appl. Phys. Lett., 83, 1752 (2003).
17. N. Kouklin, H. Chik, J. Liang, M. Izolov, J. M. Xu, J. B. Heroux, and W. I. Wang, J. Phys. D, 36, 2634 (2003).
18. C. Papadopoulos, A. Rakitin, J. Li, A. S. Vedeueev, and J. M. Xu, Phys. Rev. Lett., 85, 3476 (2000).
19. F. Keller, M. S. Hunter, and D. L. Robinson, J. Electrochem. Soc., 100, 411 (1953).
20. H. Masuda, H. Yamada, M. Satoh, and T. Tamamura, Appl. Phys. Lett., 71, 2770 (1997).
21. O. Jessensky, F. Muller, and U. Gosele, Appl. Phys. Lett., 72, 1173 (1998).
22. H. Masuda, K. Nishio, and N. Baba, Appl Phys. Lett., 63, 3155 (1993).
23. H. G. Zhang, Z. Chen, T. Li, and K. Saito, Unpublished work.
24. M. S. Hunter and P. Fowle, J. Electrochem. Soc., 101, 514 (1954).
25. G. C. Wood, J. P. O'Sullivan, and B. Vaszko, J. Electrochem. Soc., 115, 618 (1968).
26. R. Mason, J. Electrochem. Soc., 102, 671 (1955).
27. J. P. O'Sullivan and G. C. Wood, Proc. R. Soc. London, 317, 511 (1970).
28. G. E. Thompson, R. C. Furaeaux, G. C. Wood, and J. S. Goode, Nature (London), 272, 433 (1978).
29. J. W. Diggle, T. G. Downie, and C. W. Goulding, Chem. Rev. (Washington, D.C.), 69, 365 (1969).
30. A. Despic and V. Parkhutik, in Modem Aspects of Electrochemistry, J. O. M. Bokris, R. E. White, and B. E. Conway, Editors, Vol. 23, p. 401, Plenum Press, New York 1989).
31. W. C. Hu, Z. Chen, K. Saito, and C. A. Grimes, Appl. Phys. Lett., 79, 3083 (2001).
32. H. Masuda and K. Fukuda, Science, 268, 1466 (1995).