Highly periodic, three-dimensionally arranged InGaAsN:Sb quantum dot arrays fabricated nonlithographically for optical devices

Journal of Physics D: Applied Physics

Volumn 36, Issue 21, 2003, Pages 2634-2638

  Kouklin, N ^a   Chik, H ^a   Liang, J ^a   Tzolov, M ^a   Xu, J M ^a   Heroux, J B ^b   Wang, W I ^b  

^a Brown University   (United States)

^b Department of Applied Physics and Applied Mathematics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NONDESTRUCTIVE EXAMINATION; OPTICAL DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN RATE; THREE DIMENSIONAL;

LATERAL PATTERNING; MULTIPLE QUANTUM WELL WAFER; THREE DIMENSIONAL PACKING DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0242657884     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/21/006     Document Type: Article

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