A nucleation study of group III-nitride multifunctional nanostructures

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 596-600

  Gupta, Shalini ^a   Kang, Hun ^a   Strassburg, Martin ^a,b   Asghar, Ali ^a   Kane, Matthew ^a,c   Fenwick, William E ^a   Dietz, Nikolaus ^b   Ferguson, Ian T ^a,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA STATE UNIVERSITY   (United States)

^c Georgia Institute of Technology   (United States)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Nitrides; A3. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

MAGNETIC SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NUCLEATION; OPTIMAL CONTROL SYSTEMS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TEMPERATURE CONTROL;

ANTI SURFACTANT; GAN NANOSTRUCTURES; MULTIFUNCTIONAL NANOSTRUCTURES; SEMICONDUCTING III-V MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 30344472701     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.082     Document Type: Conference Paper

References (18)

1. D. Bimberg, M. Grundmann, and N.N. Ledentsov Quantum Dot Heterostructures 1999 Wiley England pp. 2-60
2. S. Nakamura J. Crystal Growth 189/190 1998 820
3. B. GiL Group III Nitride Semiconductor Compounds 1998 Oxford University Press England
4. T. Dietl Science 287 2000 1019
5. M.H. Kane Semicond. Sci. Technol. 20 2005 L5
6. I. Daruka Phys. Rev. Lett. 79 1997 3708
7. F. Widmann J. Appl. Phys. 83 1998 7618
8. B. Daudin Physica E 21 2004 540
9. M. Miyamura Appl. Phys. Lett. 80 2002 3937
10. H. Kang Mater. Res. Soc. Symp. Proc. 743 2002 L6.12.1
11. G. Solomon Appl. Phys. Lett. 66 1995 3161
12. N. Gogneau J. Appl. Phys. 94 2003 2254
13. A.L. Rosa Appl. Phys. Lett. 80 2002 2008
14. S. Tanaka Jpn. J. Appl. Phys. Part 2 39 2000 L831
15. S. Gupta Mater. Res. Soc. Symp. Proc. 831 2004 E12.7.1
16. P. Kratzert Phys. Status Solidi(b) 224 1 2001 179
17. R. Ross Science 279 1999 1931
18. S. Kuroda Phys. Status Solidi (b) 240 2 2003 443