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Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 605-610

MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors

(5) Hanna, M C a Lu, Z H a Cahill, A F a Heben, M J a Nozik, A J a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

Atomic force microscopy; InP islands; MOCVD; Photoluminescence; Quantum dots; Stranski Krastanow

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; STRAIN CONFINEMENT; STRANSKI KRASTANOW GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031547314 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00029-8 Document Type: Article

Times cited : (10)

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