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Volumn 174, Issue 1-4, 1997, Pages 605-610
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MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors
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Author keywords
Atomic force microscopy; InP islands; MOCVD; Photoluminescence; Quantum dots; Stranski Krastanow
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHARGE CARRIERS;
CRYSTAL ORIENTATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN;
SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;
STRAIN CONFINEMENT;
STRANSKI KRASTANOW GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0031547314
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00029-8 Document Type: Article |
Times cited : (10)
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References (20)
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