10 × 75 μm × 0.8 μm AlGaN/GaN power devices on sapphire substrate with output power density of 2.4 W/mm at 4 GHz

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 9, 2005, Pages 1804-1807

  Chen, Xiaojuan ^a   Liu, Xinyu ^a   He, Zhijing ^a   Liu, Jian ^a   Wu, Dexin ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN HEMT; Microwave power; Passivation; Si3N4

Indexed keywords

GALLIUM NITRIDE; MICROWAVE DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

ALGAN/GAN POWER DEVICES; OUTPUT POWER DENSITY; SAPPHIRE SUBSTRATE; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 30044446852     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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