Characteristics of HfO2 - Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Cho, M H ^a   Chung, K B ^b   Whang, C N ^b   Ko, D H ^b   Kim, H S ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Yonsei University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; DIFFUSION; LIGHT SCATTERING; NITROGEN; SILICON; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AL2 O3 -HF O2 LAMINATED FILMS; BUFFER LAYERS; MEDIUM ENERGY ION SCATTERING (MEIS); RELATIVE SUPPRESSION;

HAFNIUM COMPOUNDS;

EID: 29744470022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2147718     Document Type: Article

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