Minimization of the linewidth enhancement factor in tensile-strained quantum-well lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 9, 2000, Pages 1147-1149

  Mullane, M P ^a   McInerney, J G ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; OPTICAL MICROSCOPY; SENSITIVITY ANALYSIS; TENSILE STRENGTH;

LINEWIDTH ENHANCEMENT FACTORS;

QUANTUM WELL LASERS;

EID: 0034264833     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.874217     Document Type: Article

References (8)

1. M. Osinski and J. Buus, "Linewidth broadening factor in semiconductor lasers - An overview," IEEE J. Quantum Electron., vol. 23, pp. 9-28, Jan. 1987.
2. W. W. Chow, S. W. Koch, and M. Sargent, Semiconductor Laser Physics. Berlin, Germany: Springer-Verlag, 1993.
3. A. Kimura, M. Nido, S. Murata, J. Shimizu, K. Naniwae, and A. Suzuki, "Strain dependence of the linewidth enhancement factor in long-wavelength tensile-and compressive-strained quantum-well lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 983-986, Sept. 1993.
4. J. Stohs, D. J. Gallant, D. J. Bossert, and S. R. J. Brueck, "Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers," Proc. SPIE, vol. 2994, pp. 542-551, 1997.
5. M. Mullane and J. G. McInerney, "Minimization of the linewidth enhancement factor in compressively strained semiconductor lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 776-778, July 1999.
6. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. V. Dongen, "Progress in long-wavelength strained-layer InGaAs(P) quantum well semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 30, pp. 477-498, Feb. 1994.
7. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.
8. L. F. Tiemeijer, P. J. A. Thijs, P. J. de Waard, J. J. M. Binsma, and T. V. Dongen, "Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasers," Appl. Phys. Lett., vol. 58, no. 24, pp. 2738-2740, 1991.