AlGaN/GaN HEMT high-power and low-noise performance at f ≥ 20 GHz

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 422-427

  Smorchkova, I P ^a   Wojtowicz, M ^a   Tsai, R ^a   Sandhu, R ^a   Barsky, M ^a   Namba, C ^a   Liu, P H ^a   Dia, R ^a   Truong, M ^a   Ko, D ^a   Wang, J ^b   Wang, H ^b   Khan, A ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DATA REDUCTION; FREQUENCIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

LOW-NOISE AMPLIFIERS (LNA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242270722     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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