Voltage-splitting technique for reliability evaluation of off-state mode of MOSFETs in ultrathin gate oxides

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 414-416

  Wu, Ernest ^a   Nowak, Edward ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Dielectric reliability; Gate oxide reliability; Oxide breakdown; Time dependent dielectric breakdown (TDDB)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MAXIMUM LIKELIHOOD ESTIMATION; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

OFF STATE MODE; TIME DEPENDENT DIELECTRIC BREAKDOWN; ULTRATHIN GATE OXIDES; VOLTAGE SPLITTING;

MOSFET DEVICES;

EID: 2942722778     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.829036     Document Type: Letter

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