Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 77-80

  Sadoh, T ^a   Owatari, M ^a   Murakami, Y ^a   Kenjo, A ^a   Yoshitake, T ^a   Itakura, M ^a   Enokida, T ^b   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

FeSi2; Ge doping; Lattice strain; Nanocrystal; Solid phase crystallization

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; DOPING (ADDITIVES); GERMANIUM COMPOUNDS; IRON COMPOUNDS; LAYERED MANUFACTURING; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; STRAIN; X RAY DIFFRACTION ANALYSIS;

GE DOPING; LATTICE STRAIN; NANOCRYSTAL; SOLID-PHASE CRYSTALLIZATION;

SILICON COMPOUNDS;

EID: 2942696316     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.068     Document Type: Conference Paper

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