Charging damage in metal-oxide-metal capacitors

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 15-17

  Harris, E B ^a   Gregor, R W ^a   Dennis, D C ^a   Lai, T T ^a   Sen, S ^a   Yan, Y F ^a   Esry, T ^a   Pita, M ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; DEFECTS; ELECTRIC CHARGE; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING;

ANTENNA RATIO; ARGON FILLET ETCH PROCESS; HIGH-DENSITY PLASMA (HDP) GAS-FILL PROCESS; METAL-OXIDE-METAL (MOM) CAPACITORS; PLASMA CHARGING;

CAPACITORS;

EID: 0032280825     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)