High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 441-444

  Zielinska Rohozinska E ^a   Regulska, M ^a   Harutyunyan, V S ^b   Pakula K ^a   Borowski, J ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b YEREVAN STATE UNIVERSITY   (Armenia)

Author keywords

Dislocations; GaN; Layers; Strains; X ray diffraction

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS; X RAY DIFFRACTION ANALYSIS;

BRAGG REFLECTIONS;

SEMICONDUCTING FILMS;

EID: 0037197457     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00996-5     Document Type: Conference Paper

References (17)