Photoionization cross-sections and asymmetry parameters for GeH4 in the VUV region

Journal of Electron Spectroscopy and Related Phenomena

Volumn 135, Issue 2-3, 2004, Pages 149-153

  Dos Santos, A S ^a   Machado, L E ^a   Brescansin, L M ^b   Nascimento, E M ^c   Lee, M T ^a  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

GeH4; Photoionization asymmetry parameters; Photoionization cross sections; SVIM

Indexed keywords

ELECTRONIC STRUCTURE; PHOTOCHEMICAL REACTIONS; PHOTOIONIZATION; PHOTONS; SEMICONDUCTOR MATERIALS; SILANES; ULTRAVIOLET RADIATION;

ENVIRONMENTAL PHYSICS; PHOTOELECTRON ORBITALS; PHOTOIONIZATION CROSS-SECTIONS; VALENCE ORBITALS;

GERMANIUM COMPOUNDS;

EID: 2942662187     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2004.03.001     Document Type: Article

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