Electronic properties of microcrystalline SiGe-thin films by Hall-experiments and photo- and dark-transport

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 153-157

  Bauer, G H ^a   Voigt, F ^a   Bruggemann R ^a   Unold, T ^a   Carius, R ^b   Krause, M ^b  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GRAIN BOUNDARIES; HALL EFFECT; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS;

MICROCRYSTALLINE THIN FILMS;

THIN FILMS;

EID: 0036538999     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01194-2     Document Type: Article

References (11)