Mechanism of GeH4 dissociation on Si(1 1 1)-(7 × 7)

Surface Science

Volumn 531, Issue 3, 2003, Pages 265-271

  Braun, J ^a,b   Rauscher, H ^a   Behm, R J ^a  

^a UNIVERSITY OF ULM   (Germany)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Chemisorption; Hydrides; Scanning tunneling microscopy; Silicon; Sticking; X ray photoelectron spectroscopy

Indexed keywords

CHEMISORPTION; DISSOCIATION; GERMANIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

STICKING COEFFICIENTS;

SILICON;

EID: 0038750576     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00513-2     Document Type: Article

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