Highly-Reliable Ultra Thin Gate Oxide Formation Process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 751-754

  Iwamotol, Toshiyuki ^a   Morita, Mizuho ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); CARBON; CLEANING; CONTAMINATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOS DEVICES; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SURFACE TREATMENT; THERMOOXIDATION;

AMBIENTS; CARBON CONTAMINATION; FORMATION PROCESS; GATE OXIDE RELIABILITY; GATE OXIDE SURFACES; OXIDE FORMATION; SILICON SURFACES; THERMAL-OXIDATION; ULTRA-THIN GATE OXIDES;

THERMOOXIDATION; OXIDES;

CARBON CONTAMINATION; GATE OXIDES; MOS CAPACITORS; OXIDE FORMATION PROCESS;

EID: 0030410543     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554089     Document Type: Conference Paper

References (7)

1. F. Masuoka and K. Sakui, Ext. Abst. Int. Conf. SSDM, p.877, 1993.
2. N.Yonekawa, S. Yasui and T. Ohmi, Proceedings of UCPSS '94, p.327, 1994.
3. K. Ohmi, T. Iwamoto, T. Yabune, T. Miyake and T. Ohmi: Jpn. J. Appl. Phys. 35, p. 1531, 1996.
4. T. Ohmi, M. Miyashita, M. Itano, T. Imaoka and I. Kawanabe, IEEE Trans. Electron Devices 39, p.537, 1992.
5. J. Takano, K. Makihara and T. Ohmi, Mat. Res. Soc. Symp. Proc. 315, p.381, 1993.
6. K. Makihara, A. Teramoto, K. Nakamura, M. Y. Kwon, M. Morita and T. Ohmi, Jpn. J. Appl. Phys. 32, p.294,1993.
7. John R. Vig, in Handbook of Semiconductor Wafer Cleaning Technology, Edited by Werner Kern, p.233, Noyes, 1993.