Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4155-4157

  Tasco, V ^a   Todaro, M T ^a   De Vittorio, M ^a   De Giorgi, M ^a   Cingolani, R ^a   Passaseo, A ^a   Ratajczak, J ^b   Katcki, J W ^b  

^a INFM   (Italy)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTROLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPTIMIZATION; PHOTOLUMINESCENCE; Q FACTOR MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

EXTRACTION EFFICIENCY; MICROCAVITY LIGHT-EMITTING DIODES (MCLED); QUALITY FACTOR; WAVELENGTH EMISSION;

LIGHT EMITTING DIODES;

EID: 2942635818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755411     Document Type: Article

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