Optical investigations of solid-phase crystallization of Si1-xGex

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2054-2057

  Yamaguchi, Shinya ^a   Sugii, Nobuyuki ^a   Nakagawa, Kiyokazu ^a   Miyao, Masanobu ^b  

^a HITACHI LTD   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Defect; Ellipsometry; Germanium; Silicon; Solid phase crystallization

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; ELLIPSOMETRY; ION IMPLANTATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; SPECTROSCOPY;

CRYSTAL QUALITY; SOLID PHASE CRYSTALLIZATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033706510     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2054     Document Type: Article

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