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Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 632-636

Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon

(4) Bruggemann R a Kleider, J P b Bronner, W c Zrinscak, I d

a Carl von Ossietzky Universiät Oldenburg (Germany)

b UNIV PARIS SUD (France)

c UNIVERSITY OF STUTTGART (Germany)

d UNIVERSITY OF ABERTAY DUNDEE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRON IRRADIATION; ELECTRONIC DENSITY OF STATES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTON IRRADIATION;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

SILICON;

EID: 0036539771 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00971-1 Document Type: Article

Times cited : (3)

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