Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3834-3836

  Yamauchi, T ^a   Tabuchi, M ^b   Nakamura, A ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; DESORPTION; ELECTROSTATICS; IMAGE ANALYSIS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAHIGH VACUUM; WETTING;

CONTACT POTENTIAL DIFFERENCES (CPD); ELECTROSTATIC FORCES; KELVIN FORCE PROBE MICROSCOPY (KFM); WORK FUNCTION (WF);

SEMICONDUCTOR QUANTUM DOTS;

EID: 2942604946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1745110     Document Type: Article

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