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Volumn 151, Issue 5, 2004, Pages

Porous SiGe nanostructures formed by electrochemical etching of thin Poly-SiGe films

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BANDWIDTH; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTROCHEMISTRY; ETCHING; EXCITONS; GERMANIUM; POLYSILICON; POROUS SILICON; SILICON COMPOUNDS; THIN FILMS;

EID: 2942567745     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1695531     Document Type: Article
Times cited : (8)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.