Photoluminescence lifetime and structure of molecular beam epitaxy porous Si1-xGex grown on Si

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 143-146

  Unal B ^a   Parkinson, M ^b   Bayliss, S C ^c   Naylor, T ^a   Schroder D ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POROUS MATERIALS; QUANTUM THEORY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS) SPECTROSCOPY; QUANTUM CONFINEMENT EFFECT; SOLID STATE MOLECULAR BEAM EPITAXY (SS-MBE);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0342298433     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009656704023     Document Type: Article

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