Photoluminescence of Ge nano-crystallites embedded in silicon oxide

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 541-543

  Torchynska, T V ^a   Polupan, G ^a   Palacios Gomez, J ^a   Kolobov, A V ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Nano crystallites; Photoluminescence; Transmission electron microscopy

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

X-RAY ABSORPTION;

NANOSTRUCTURED MATERIALS;

EID: 0038180611     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00043-0     Document Type: Conference Paper

References (9)

1. Kolobov A.V., Maeda Y., Tanaka K. J. Appl. Phys. 88:2000;3285.
2. Maeda Y. Phys. Rev. B. 51:1995;1658.
3. Kanemitsu Y., Uto H., Masumoto Y., Maeda Y. Appl. Phys. Lett. 61:1992;2187.
4. Dimaria D.J., Kirtley J.R., Parkulis E.J., Dong D.W., Kuan T.S., Pesavento F.L., Theis T.N., Cutro J.A. J. Appl. Phys. 56:1984;401.
5. Ito T., Ohta T., Hiraki A. Jpn. J. Appl. Phys. 31:1992;L1.
6. Torchynska T., Aguilar-Hernandez J., Diaz Cano A.I., Contreras-Puente G., Becerril Espinoza F.G., Vorobiev Y.V., Goldstein Y., Many A., Jedrzejewski J., Bulakh B.M., Scherbina L.V. Physica B. 308-310:2001;1108.
7. Hayashi S., Kataoka M., Yamamoto K. Jpn. J. Appl. Phys. 32:1993;1274.
8. Kolobov A., Oyanagi H., Maeda Y., Tanaka K. J. Synchrotron. Rad. 8:2001;511.
9. Prokes S.M., Carlos W.E., Veprek S., Ossadnik C. Phys. Rev. B. 58:1998;15632.