Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 206-210

  Raniero, L ^a   Pereira, L ^a   Zhang, Shibin ^a   Ferreira, I ^a   Aguas H ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC SPACE CHARGE; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; INFRARED SPECTROSCOPY; NUCLEATION; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; STRESSES; THIN FILMS;

EXCITATION FREQUENCIES; PLASMA CONDITIONS; SPACE CHARGE LIMITED CURRENT (SCLC) TECHNIQUE; URBACH ENERGIES;

SILICON;

EID: 2942558760     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.054     Document Type: Conference Paper

References (13)

1. Rocas i Cabarrocas P. J. Non-Cryst. Solids. 266-269:2000;31.
2. Kleider J.P., Longeaud C., Gauthier M., Meaudre M., Meaudre R., Butte R., Vignoli S., Roca i Cabarrocas P. Appl. Phys. Lett. 75:1999;3351.
3. Jelenkovic B.M., Gallagher A. J. Appl. Phys. 82(4):1997;1546.
4. Sakata I., Yamanaka M., Numase S., Hayashi Y. J. Appl. Phys. 71:1992;4344.
5. Street R.A. Hydrogenated Amorphous Silicon. 1991;Cambridge University, Cambridge.
6. Van Den Heuvel J.C., Van Oort R.C., Bokhorst B., Geerts M.J. Mat. Res. Soc. Symp. Proc. 149:1989;155.
7. Tim Searle, Amorphous Silicon and Its Alloy, University of Sheffield, UK, 1998, p. 151.
8. Mahan H. Phys. Rev. B. 61(3):2000;1677.
9. Martins R., Maçarico A., Ferreira I., Fidalgo J., Fortunato E. Philos. Mag. B. 76(3):1997;259.
10. Boufendi L., Gaudin J., Huet S., Viera G., Dudemaine M. Appl. Phys. Lett. 79:2001;4301.
11. Sasabayashi T., Song P.K., Shigesato Y., Utsumi K., Kaijo A., Mitsui A. Mater. Res. Soc. Symp. Proc. 666:2001;F2.4.1.
12. Den Boer W. J. Phys. 42:1981;C4-451.
13. Águas H., Silva V., Fortunato E., Lebib S., Rocas i Cabarrocas P., Ferreira I., Guimarães L., Martins R. Jpn. J. Appl. Phys. 42:2003;4935.