Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 583-587

  Wang, T ^a,b   Parbrook, P J ^a   Harrison, C N ^a   Ao, J P ^c   Ohno, Y ^c  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b TIANJIN UNIVERSITY   (China)

^c UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

A1. Distributed Bragg reflectors; A1. Reflectivity; A1. Ultraviolet; B1. AlInGoN quaternary; B3. Light emitting diodes

Indexed keywords

ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; LIGHT EMISSION; LIGHT EMITTING DIODES; POWER ELECTRONICS; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION;

ALINGAN QUATERNARY; CARBONIC ACID; DISTRIBUTED BRAGG REFLECTORS; OPTICAL CATALYSTS;

ALUMINUM COMPOUNDS;

EID: 2942548993     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.029     Document Type: Article

References (21)

1. Wang T., Liu Y.H., Lee Y.B., Ao J.P., Bai J., Sakai S. Appl. Phys. Lett. 81:2002;2508.
2. Zhang J.P., Kuokstis E., Fareed Q., Wang H., Yang J., Simin G., Asif Khan M., Gaska R., Shur M. Appl. Phys. Lett. 79:2003;925.
3. Wang T., Parbrook P.J., Whitehead M.A. Phys. Stat. Sol. (c). 0:2003;2019.
4. Nishida T., Kobayashi N., Ban T. Appl. Phys. Lett. 82:2003;1.
5. Yasan A., McClintock R., Mayes K., Kim D.H., Kung P., Razeghi M. Appl. Phys. Lett. 83:2003;4083.
6. Sato H., Wang H.X., Sato D., Takaki R., Wada N., Sakai S. Phys. Stat. Sol. (a). 200:2003;102.
7. Chitnis A., Adivarhan V., Zhang J.P., Shatalov M., Wu S., Yang J., Simin G., Asif Khan M., Hu X., Fareed Q., Gaska R., Shur M.S. Phys. Stat. Sol. (a). 99:2003;200.
8. Kim K.H., Li J., Jin S.X., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 83:2003;566.
9. Lee Y.B., Wang T., Liu Y.H., Ao J.P., Li H.D., Sato H., Nishino K., Naoi Y., Sakai S. Jpn. J. Appl. Phys. 41(Part 2):2002;L1037.
10. Lee Y.B., Wang T., Liu Y.H., Ao J.P., Li H.D., Bai J., Sakai S. Jpn J. Appl. Phys. 41(Part 1):2002;4450.
11. Nishida T., Saito H., Kobayashi N. Appl. Phys. Lett. 79:2001;711.
12. M. Iwaya, S. Terao, T. Sano, S. Takanami, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano I. Akasaki, 4th International Conference Nitride Semiconductors (ICNS-4), Denver, B6.4 (2001).
13. Zhang J.P., Chitnis A., Adivarahan V., Wu S., Mandavilli V., Pachipulusu R., Shatalov M., Simin G., Yang J.W., Asif Khan M. Appl. Phys. Lett. 81:2002;4910.
14. Kipshidze G., Kuryatkov V., Borisov B., Holz M., Nikishin S., Temkin H. Appl. Phys. Lett. 80:2002;3682.
15. Yasan A., McClintock R., Mayes K., Darvish S.R., Kung P., Razeghi M. Appl. Phys. Lett. 81:2002;801.
16. Hanlon A., Pattison P.M., Kaeding J.F., Sharma R., Fini P., Nakamura S. Jpn. J. Appl. Phys. 42(Part 2):2003;L628.
17. M. Iwaya, S. Terao, T. Sano, S. Takanami, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano, I. Akasaki, Extended Abstracts of The 48th Spring Meeting of The Japan Society of Applied Physics and Related Societies, Tokyo, March 28-31/2001, p. 366.
18. T. Wang, R.J. Lynch, P.J. Parbrook, R. Butté, A. Alyamani, D.Sanvitto, D.M.Whittaker,M.S. Skolnick, Appl. Phys.Lett., in print.
19. Brunner D., Angerer H., Bustarret E., Freudenberg F., Hoepler R., Dimitrov R., Ambacher O., Stutzmann M. J. Appl. Phys. 82:1997;5090.
20. Erchak A.A., Ripin D.J., Fan S.H., Rakich P., Joannoupoulos J.D., Ippen E.P., Petrich G.S., Kolodziejski L.A. Appl. Phys. Lett. 78:2001;563.
21. Nakada N., Nakaji M., Ishikawa H., Egawa T., Umeno M., Jimbo T. Appl. Phys. Lett. 76:2000;1806.