High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 102-105

  Sato, Hisao ^a   Wang, Hong Xing ^a   Sato, Daisuke ^a   Takaki, Ryohei ^a   Wada, Naoki ^a   Tanahashi, Tetsuya ^a   Yamashita, Kenji ^a   Kawano, Shunsuke ^a   Mizobuchi, Takashi ^a   Dempo, Akihiko ^a   Morioka, Kenji ^a   Kimura, Masahiro ^a   Nohda, Suguru ^a   Sugahara, Tomoya ^b   Sakai, Shiro ^b  

^a Nitride Semiconductors Co Ltd   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

ALUMINUM GALLIUM INDIUM NITRIDE; EPITAXIAL LATERAL OVERGROWTH; EXTERNAL QUANTUM EFFICIENCY; INJECTION CURRENT;

LIGHT EMITTING DIODES;

EID: 0347516430     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303478     Document Type: Article

References (9)

1. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, phys. stat. sol. (a) 188 (1), 121 (2001).
2. T. Nishida, H. Saito and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001).
3. D. Morita, M. Sano, M. Yamamoto, T. Murayama, S. Nagahama, and T. Mukai, Jpn. J. Appl. Phys. 41, L1434 (2002).
4. T. Nishida, N. Kobayashi, and T. Ban, Appl. Phys. Lett. 82, 1 (2003).
5. T. Wang, Y. Morishima, N. Naoi, and S. Sakai, J. Cryst. Growth, 213, 188 (2000).
6. T. Wang, Y. H. Liu, Y. B. Lee, J. P. Ao, J. Bai, and S. Sakai, Appl. Phys. Lett. 81, 2508 (2002).
7. Y. B. Lee, T. Wang, Y. H. Liu, J. P. Ao, Y. Izumi, Y. Lacroix, H. D. Li, J. Bai, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys. 41, 4450 (2002).
8. T. Tada, Y. Naoi, N. Jiang, Y. Shintani, and S. Sakai, Int. Conf. Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30, Tu-P2.002 (2003).
9. Y. B. Lee, T. Wang, Y. H. Liu, J. P. Ao, H. D. Li, H. Sato, K. Nishino, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys. 41, L1037 (2002).