-
1
-
-
0002250337
-
Hydrogen sensitive MOS field-effect transistor
-
I. Lundstrom, M.S. Shivaraman, C. Svensson and L. Lundkvist, Hydrogen sensitive MOS field-effect transistor, Appl. Phys. Lett., 26 (1975) 55-57.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 55-57
-
-
Lundstrom, I.1
Shivaraman, M.S.2
Svensson, C.3
Lundkvist, L.4
-
2
-
-
49149135059
-
Hydrogen sensitive MOS structures. Part 1: Principles and applications
-
I. Lundstrom, Hydrogen sensitive MOS structures. Part 1: principles and applications, Sensors and Actuators, 1 (1981) 403-426.
-
(1981)
Sensors and Actuators
, vol.1
, pp. 403-426
-
-
Lundstrom, I.1
-
3
-
-
0019698094
-
Hydrogen sensitive MOS structures. Part 2: Characterization
-
I. Lundstrom, Hydrogen sensitive MOS structures. Part 2: characterization, Sensors and Actuators, 2 (1981/82) 105-138.
-
(1981)
Sensors and Actuators
, vol.2
, pp. 105-138
-
-
Lundstrom, I.1
-
5
-
-
0028531357
-
x or ZnO)-insulator-semiconductor gas sensors
-
x or ZnO)-insulator-semiconductor gas sensors, Sensors and Actuators B, 22 (1994) 47-55.
-
(1994)
Sensors and Actuators B
, vol.22
, pp. 47-55
-
-
Kang, W.P.1
Kim, C.K.2
-
8
-
-
33747020720
-
Hydrogen sensitivity of palladium-thin-oxide-silicon Schottky barriers
-
M.S. Shivaraman, I. Lundstrom, C. Svensson and H. Hammarsten, Hydrogen sensitivity of palladium-thin-oxide-silicon Schottky barriers, Electron Lett., 12 (1976) 483-484.
-
(1976)
Electron Lett.
, vol.12
, pp. 483-484
-
-
Shivaraman, M.S.1
Lundstrom, I.2
Svensson, C.3
Hammarsten, H.4
-
9
-
-
0019607497
-
A study of Pd/Si MIS Schottky barrier diode hydrogen detector
-
P.F. Ruths, S. Ashok, S.J. Fonash and J.M. Ruths, A study of Pd/Si MIS Schottky barrier diode hydrogen detector, IEEE Trans. Electron. Devices, 28 (1981) 1003-1009.
-
(1981)
IEEE Trans. Electron. Devices
, vol.28
, pp. 1003-1009
-
-
Ruths, P.F.1
Ashok, S.2
Fonash, S.J.3
Ruths, J.M.4
-
12
-
-
0001515880
-
Novel platinum-tin oxide-silicon nitride-silicon dioxide-silicon gas sensing component for oxygen and carbon monoxide gases at low temperature
-
W.P. Kang and C.K. Kim, Novel platinum-tin oxide-silicon nitride-silicon dioxide-silicon gas sensing component for oxygen and carbon monoxide gases at low temperature, Appl. Phys. Lett., 63 (1993) 421-423.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 421-423
-
-
Kang, W.P.1
Kim, C.K.2
-
14
-
-
0028193937
-
Oxygen effect on the operation of the MOS-structure based hydrogen sensor
-
V. Flippov, A. Trentjev and S. Yakimov, Oxygen effect on the operation of the MOS-structure based hydrogen sensor, Sensors and Actuators, 17 (1994) 121-124.
-
(1994)
Sensors and Actuators
, vol.17
, pp. 121-124
-
-
Flippov, V.1
Trentjev, A.2
Yakimov, S.3
-
15
-
-
33845301707
-
Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection
-
W.P. Kang and Y. Gurbuz, Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection, J. Appl. Phys., 75 (1994) 8175-8181.
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 8175-8181
-
-
Kang, W.P.1
Gurbuz, Y.2
-
16
-
-
21144460998
-
Chemical sensors for high temperatures based on silicon carbide
-
A. Arbab, A. Spetz, Q. ul. Wahab, M. Willander and I. Lundstrom, Chemical sensors for high temperatures based on silicon carbide, Sensors Mater., 4 (1993) 173-185.
-
(1993)
Sensors Mater.
, vol.4
, pp. 173-185
-
-
Arbab, A.1
Spetz, A.2
Ul. Wahab, Q.3
Willander, M.4
Lundstrom, I.5
-
17
-
-
0027647550
-
Gas sensors for high temperatures based on metal-oxide-silicon carbide (MOSIC) devices
-
A. Arbab, A. Spetz and I. Lundstrom, Gas Sensors for high temperatures based on metal-oxide-silicon carbide (MOSIC) devices, Sensors and Actuators B, 15-16 (1993) 19-23.
-
(1993)
Sensors and Actuators B
, vol.15-16
, pp. 19-23
-
-
Arbab, A.1
Spetz, A.2
Lundstrom, I.3
-
18
-
-
0028482907
-
A new hydrogen sensor using a polycrystalline diamond-based Schottky diode
-
W.P. Kang, Y. Gurbuz, J.L. Davidson and D.V. Kerns, A new hydrogen sensor using a polycrystalline diamond-based Schottky diode, J. Electrochem. Soc., 141 (1994) 2231-2234.
-
(1994)
J. Electrochem. Soc.
, vol.141
, pp. 2231-2234
-
-
Kang, W.P.1
Gurbuz, Y.2
Davidson, J.L.3
Kerns, D.V.4
-
19
-
-
0029290616
-
A polycrystalline diamond thin-film based hydrogen sensor
-
W.P. Kang, Y. Gurbuz, J.L. Davidson and D.V. Kerns, A polycrystalline diamond thin-film based hydrogen sensor, Sensors and Actuators B, 24-25 (1995) 421-425.
-
(1995)
Sensors and Actuators B
, vol.24-25
, pp. 421-425
-
-
Kang, W.P.1
Gurbuz, Y.2
Davidson, J.L.3
Kerns, D.V.4
-
20
-
-
0029542205
-
Diamond microelectronic gas sensors
-
Stockholm, Sweden
-
Y. Gurbuz, W.P. Kang, J.L. Davidson and D.V. Kerns, Diamond microelectronic gas sensors, Transducers'95-Eurosensor IX, 1995, Stockholm, Sweden.
-
(1995)
Transducers'95-Eurosensor IX
-
-
Gurbuz, Y.1
Kang, W.P.2
Davidson, J.L.3
Kerns, D.V.4
-
23
-
-
0000611786
-
The interpretation of space-charge-limited currents in semiconductors and insulator
-
R.D. Gould, The interpretation of space-charge-limited currents in semiconductors and insulator, J. Appl. Phys., 53 (1982) 3353-3355.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 3353-3355
-
-
Gould, R.D.1
-
24
-
-
0022697916
-
New way of plotting current/voltage characteristics of schottky diodes
-
M. Missous and E.H. Rhoderick, New way of plotting current/voltage characteristics of Schottky diodes, Electron. Lett., 22 (1986) 47-48.
-
(1986)
Electron. Lett.
, vol.22
, pp. 47-48
-
-
Missous, M.1
Rhoderick, E.H.2
-
25
-
-
0001452980
-
Temperature dependency of the electrical characteristics of Yb/p-InP tunnel metal-insulator/semiconductor junctions
-
A. Singh, C.C. Reinhardt and W.A. Anderson, Temperature dependency of the electrical characteristics of Yb/p-InP tunnel metal-insulator/semiconductor junctions, J. Appl. Phys., 68 (1990) 3475-3483.
-
(1990)
J. Appl. Phys.
, vol.68
, pp. 3475-3483
-
-
Singh, A.1
Reinhardt, C.C.2
Anderson, W.A.3
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