Gate conduction mechanism in nonvolatile-dynamic random access memory (NVDRAM) cell transistors

Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 3, 2005, Pages

  Yi, Jeong Hyong ^a   Shin, Hyungcheol ^a   Park, Young June ^a   Min, Hong Shick ^a   Lee, Sang Don ^b   Ahn, Jin Hong ^b  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Gate current; Non volatile DRAM; ONO gate dielectric; Tunneling process

Indexed keywords

EID: 29344464160     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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