New Erase Characteristics for a Two-Bit SONOS Flash Memory

Journal of the Korean Physical Society

Volumn 43, Issue 5 II, 2003, Pages 868-872

  An, Ho Myoung ^a   Han, Tae Hyeon ^a   Seo, Kwang Yell ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Flash memory; Hot hole erase; Localized charge trapping; SONOS; Two bit storage

Indexed keywords

EID: 0344982790     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.43.868     Document Type: Article

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