Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction

IEEE Transactions on Reliability

Volumn 51, Issue 4, 2002, Pages 482-485

  Mittereder, Jeffrey A ^a,b   Roussos, Jason A ^a,b   Anderson, Wallace T ^a,b   Ioannou, Dimitrios E ^a,c  

^a IEEE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c George Mason University   (United States)

Author keywords

Baseplate temperature; Channel temperature; Gallium arsenide; Thermistor

Indexed keywords

BASEPLATE TEMPERATURE; CHANNEL TEMPERATURE; LIFE-TIME PREDICTION;

ATOMIC FORCE MICROSCOPY; CALIBRATION; COMPUTER SIMULATION; ELECTRONIC EQUIPMENT; HIGH ELECTRON MOBILITY TRANSISTORS; INFRARED RADIATION; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE MEASUREMENT; THERMISTORS;

RELIABILITY;

EID: 0036890581     PISSN: 00189529     EISSN: None     Source Type: Journal    
DOI: 10.1109/TR.2002.804487     Document Type: Article

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