Photon enhanced diffusion model for α-Si:H photo-degradation

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages 91-103

  Phelps, G J ^a,b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b MURDOCH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT BOUNDARIES; HYDROGEN DOPANT; OPEN-CIRCUIT TERMINAL POTENTIAL; PHOTON ENHANCED DIFFUSION (PED);

CARRIER CONCENTRATION; DIFFUSION; FERMI LEVEL; MATHEMATICAL MODELS; PHOTODEGRADATION; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES;

AMORPHOUS SILICON;

EID: 29244482605     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/017     Document Type: Article

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