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Volumn 5883, Issue , 2005, Pages 1-8

Characterization of dual-band infrared detectors for application to remote sensing

Author keywords

Characterization; Detectivity; Detectors; Dual band; Fabrication; Infrared; Noise; Photovoltaic; Quantum efficiency; Responsivity

Indexed keywords

DETECTIVITY; DUAL-BAND; PHOTOVOLTAIC; RESPONSIVITY;

EID: 29244458707     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.614938     Document Type: Conference Paper
Times cited : (8)

References (11)
  • 2
    • 15844397629 scopus 로고    scopus 로고
    • Progress of multicolor single detector to detector array development for remote sensing
    • Infrared Spaceborne Remote Sensing XII
    • M.N. Abedin, T.F. Refaat, Y. Xiao, I.E. Bhat, S.V. Bandara, and S.D. Gunapala, "Progress of multicolor single detector to detector array development for remote sensing", Infrared Spaceborne Remote Sensing XII, SPIE Vol. 5543, pp. 239-247 (2004).
    • (2004) SPIE , vol.5543 , pp. 239-247
    • Abedin, M.N.1    Refaat, T.F.2    Xiao, Y.3    Bhat, I.E.4    Bandara, S.V.5    Gunapala, S.D.6
  • 7
    • 29244473752 scopus 로고    scopus 로고
    • GaInAsSb-based infrared detectors in the 2-μm range fabricated from multi-layers grown by Metalorganic vapor Phase epitaxy
    • Charleston, SC, February
    • I. Bhat, Y. Xiao, V. Bhagwath, P. Dutta, T.F. Refaat, and M.N. Abedin, "GaInAsSb-based infrared detectors in the 2-μm range fabricated from multi-layers grown by Metalorganic vapor Phase epitaxy", MSS Workshop, Charleston, SC, February 2005.
    • (2005) MSS Workshop
    • Bhat, I.1    Xiao, Y.2    Bhagwath, V.3    Dutta, P.4    Refaat, T.F.5    Abedin, M.N.6
  • 8
    • 29244439471 scopus 로고    scopus 로고
    • Organometallic vapor phase epitaxy of GaSb/InGaAsSb multilayers and fabrication of dual band infrared detectors
    • to be presented at the Montana, July 10-14
    • I. Bhat, Y. Xiao, T.F. Refaat, and M.N. Abedin, "Organometallic Vapor Phase Epitaxy of GaSb/InGaAsSb Multilayers and Fabrication of Dual band Infrared Detectors", to be presented at the Twelfth US Biennial Workshop on Organometallic Vapor Phase Epiatxy (OMVPE), Montana, July 10-14, 2005.
    • (2005) Twelfth US Biennial Workshop on Organometallic Vapor Phase Epiatxy (OMVPE)
    • Bhat, I.1    Xiao, Y.2    Refaat, T.F.3    Abedin, M.N.4
  • 10
    • 0032477212 scopus 로고    scopus 로고
    • P-type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy
    • H. Ehsani, I. Bhat, C. Hitchcock, R. J. Gutmann, G. Charache, and M. Freeman, "p-type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy", J. Crystal Growth, 195, pp. 385-390 (1998).
    • (1998) J. Crystal Growth , vol.195 , pp. 385-390
    • Ehsani, H.1    Bhat, I.2    Hitchcock, C.3    Gutmann, R.J.4    Charache, G.5    Freeman, M.6
  • 11
    • 0001179444 scopus 로고    scopus 로고
    • 0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
    • 0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source", Appl. Phys. Lett., 69, pp. 3863-3865 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 3863-3865
    • Ehsani, H.1    Bhat, I.2    Gutmann, R.J.3    Charache, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.