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Volumn 30, Issue 4, 2004, Pages 259-261

Peculiarities of the oxidation of porous silicon during aqueous after-etching

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EID: 2542589502     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1748593     Document Type: Article
Times cited : (2)

References (18)
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    • D. N. Goryachev, G. Polisskiǐ, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1016 (1998) [Semiconductors 32, 910 (1998)].
    • (1998) Semiconductors , vol.32 , pp. 910
  • 9
    • 0346083980 scopus 로고    scopus 로고
    • S. A. Gavrilov, A. I. Belogorokhov, and L. I. Belogorokhova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 104 (2002) [Semiconductors 36, 98 (2002)].
    • (2002) Semiconductors , vol.36 , pp. 98
  • 11
    • 21344462580 scopus 로고
    • M. E. Kompan and I. Yu. Shabanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1250 (1995) [Semiconductors 29, 971 (1995)].
    • (1995) Semiconductors , vol.29 , pp. 971
  • 13
    • 0035536883 scopus 로고    scopus 로고
    • B. M. Kostishko and Yu. S. Nagornov, Zh. Tekh. Fiz. 71 (7), 60 (2001) [Tech. Phys. 46, 847 (2001)].
    • (2001) Tech. Phys. , vol.46 , pp. 847


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.